(China (Mainland))
Product Summary
The VN0300M is an N-channel enhancement mode MOS transistor.
Parametrics
VN0300M absolute maximum ratings: (1)drain-source voltage, VDS: 30V; (2)gate-source voltage, VGS: ±30V; (3)continuous drain current, ID: 0.67A at TA=25℃; 043A at TA=100℃; (4)pulsed drain current, IDM: 3A; (5)power dissipation, PD: 1W at TA=25℃; 0.4W at TA=100℃; (6)operating junction & storage temperature range, TJ, Tstg: -55 to 150℃; (7)lead temperaure, TL: 300℃.
Features
VN0300M features: (1)V(BR)DSS: 30V; (2)rDS(ON): 1.2Ω; (3)ID: 0.67A; (4)package: TO-237.
Diagrams
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 VN0300M |
Other |
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Data Sheet |
Negotiable |
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Data Sheet |
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VN0300B |
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Data Sheet |
Negotiable |
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Vishay/Siliconix |
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Data Sheet |
Negotiable |
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VN0300L-G |
Supertex |
MOSFET 30V 1.2Ohm |
Data Sheet |
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