Product Summary

The RFP50N06 is an N-Channel power MOSFET. It uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP50N06 is designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. The RFP50N06 can be operated directly from integrated circuits.

Parametrics

RFP50N06 absolute maximum ratings: (1)Drain to Source Voltage VDSS: 60 V; (2)Drain to Gate Voltage (RGS= 20kΩ) VDGR: 60 V; (3)Gate to Source Voltage VGS: ±20 V; (4)Continuous Drain Current ID: 50A; (5)Power Dissipation PD: 131W; Linear Derating Factor: 0.877W/℃; (6)Operating and Storage Temperature TJ, TSTG: -55 to 175℃; (7)Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s TL: 300℃; Package Body for 10s, see Techbrief 334 Tpkg: 260℃.

Features

RFP50N06 features: (1)50A, 60V; (2)rDS(ON)= 0.022Ω; (3)Temperature Compensating PSPICE Model; (4)Peak Current vs Pulse Width Curve; (5)UIS Rating Curve; (6)175℃ Operating Temperature.

Diagrams

RFP50N06 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
RFP50N06
RFP50N06

Fairchild Semiconductor

MOSFET TO-220AB N-CH POWER

Data Sheet

0-1: $0.80
1-25: $0.70
25-100: $0.65
100-250: $0.56
RFP50N06_Q
RFP50N06_Q

Fairchild Semiconductor

MOSFET TO-220AB N-CH POWER

Data Sheet

Negotiable