Product Summary

The IRL1404S is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRL1404S well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. The IRL1404S provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The device is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

Parametrics

IRL1404S absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 160 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 110 A; (3)IDM Pulsed Drain Current: 640 A; (4)PD @TA = 25℃ Power Dissipation: 3.8 W; (5)PD @TC = 25℃ Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS Gate-to-Source Voltage: ±20 V; (8)EAS Single Pulse Avalanche Energy: 520 mJ; (9)IAR Avalanche Current: 95 A; (10)EAR Repetitive Avalanche Energy: 20 mJ; (11)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175 ℃.

Features

IRL1404S features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.

Diagrams

IRL1404S diaram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRL1404S
IRL1404S

MOSFET N-CH 40V 160A D2PAK
Data Sheet
Negotiable 
IRL1404SPBF
IRL1404SPBF
International Rectifier
MOSFET
Data Sheet
0-1: $2.46
1-25: $1.68
25-100: $1.34
100-250: $1.32
IRL1404STRLPBF
IRL1404STRLPBF
International Rectifier
MOSFET MOSFT 40V 160A 4mOhm 93.3nC Log Lvl
Data Sheet
0-1: $2.71
1-25: $1.85
25-100: $1.38
100-250: $1.32